JS

Jon Slaughter

ET Everspin Technologies: 88 patents #3 of 88Top 4%
Motorola: 17 patents #417 of 12,470Top 4%
FS Freeescale Semiconductor: 14 patents #191 of 3,767Top 6%
IBM: 1 patents #44,794 of 70,183Top 65%
📍 Slingerlands, NY: #3 of 96 inventorsTop 4%
🗺 New York: #383 of 115,490 inventorsTop 1%
Overall (All Time): #9,913 of 4,157,543Top 1%
120
Patents All Time

Issued Patents All Time

Showing 101–120 of 120 patents

Patent #TitleCo-InventorsDate
6818961 Oblique deposition to induce magnetic anisotropy for MRAM cells Nicholas Rizzo, Bradley N. Engel, Jason Janesky, Jijun Sun 2004-11-16
6801415 Nanocrystalline layers for improved MRAM tunnel junctions Renu W. Dave, Jijun Sun 2004-10-05
6783637 High throughput dual ion beam deposition apparatus Gerald Steiner 2004-08-31
6549454 TMR material having a substantially smooth and continuous ultra-thin magnetic layer 2003-04-15
6544801 Method of fabricating thermally stable MTJ cell and apparatus Saied N. Tehrani, Eugene Chen, Mark Durlam, Mark Deherrera, Renu W. Dave 2003-04-08
6518071 Magnetoresistive random access memory device and method of fabrication thereof Mark Durlam, Mark Deherrera, Kelly Kyler, Brian R. Butcher, Gregory W. Grynkewich +2 more 2003-02-11
6395595 Multi-layer tunneling device with a graded stoichiometry insulating layer 2002-05-28
6376260 Magnetic element with improved field response and fabricating method thereof Eugene Chen, Jing Shi 2002-04-23
6365419 High density MRAM cell array Mark Durlam, Mark Deherrera, Eugene Chen, Saied N. Tehrani, Gloria Kerszykowski +2 more 2002-04-02
6292389 Magnetic element with improved field response and fabricating method thereof Eugene Chen, Jing Shi 2001-09-18
6281538 Multi-layer tunneling device with a graded stoichiometry insulating layer 2001-08-28
6261646 Method of making a low resistance MTJ Eugene Chen, Renu Whig 2001-07-17
6233172 Magnetic element with dual magnetic states and fabrication method thereof Eugene Chen, Mark Durlam, Mark Deherrera, Saied N. Tehrani 2001-05-15
6211090 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories Mark Durlam, Eugene Chen, Saied N. Tehrani, Gloria Kerszykowski, Kelly Kyler 2001-04-03
6205052 Magnetic element with improved field response and fabricating method thereof Jing Shi, Eugene Chen, Saied N. Tehrani 2001-03-20
6183859 Low resistance MTJ Eugene Chen, Renu Whig 2001-02-06
6174737 Magnetic random access memory and fabricating method thereof Mark Durlam, Gloria Kerszykowski, Theodore Zhu, Eugene Chen, Saied N. Tehrani +1 more 2001-01-16
6165803 Magnetic random access memory and fabricating method thereof Eugene Chen 2000-12-26
6153443 Method of fabricating a magnetic random access memory Mark Durlam, Gloria Kerszykowski, Eugene Chen, Saied N. Tehrani, Kelly Kyler +1 more 2000-11-28
5940319 Magnetic random access memory and fabricating method thereof Mark Durlam, Gloria Kerszykowski, Theodore Zhu, Eugene Chen, Saied N. Tehrani +1 more 1999-08-17