Issued Patents All Time
Showing 51–75 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9698201 | High density selector-based non volatile memory cell and fabrication | Hagop Nazarian, Harry Yue Gee | 2017-07-04 |
| 9685608 | Reduced diffusion in metal electrode for two-terminal memory | Steven Patrick Maxwell | 2017-06-20 |
| 9685483 | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process | Hagop Nazarian, Harry Yue Gee | 2017-06-20 |
| 9673255 | Resistive memory device and fabrication methods | Kuk-Hwan Kim, Tanmay Kumar | 2017-06-06 |
| 9633724 | Sensing a non-volatile memory device utilizing selector device holding characteristics | Hagop Nazarian, Lin Shih Liu | 2017-04-25 |
| 9627443 | Three-dimensional oblique two-terminal memory with enhanced electric field | Joanna Bettinger, Xianliang Liu | 2017-04-18 |
| 9627614 | Resistive switching for non volatile memory device using an integrated breakdown element | Wei Lu | 2017-04-18 |
| 9620206 | Memory array architecture with two-terminal memory cells | Hagop Nazarian, Wei Lu | 2017-04-11 |
| 9613694 | Enhanced programming of two-terminal memory | Zhi Li, Tanmay Kumar | 2017-04-04 |
| 9601690 | Sub-oxide interface layer for two-terminal memory | Harry Yue Gee, Mark Clark, Steven Patrick Maxwell, Natividad Vasquez | 2017-03-21 |
| 9601692 | Hetero-switching layer in a RRAM device and method | — | 2017-03-21 |
| 9590013 | Device switching using layered device structure | Wei Lu | 2017-03-07 |
| RE46335 | Switching device having a non-linear element | Wei Lu, Hagop Nazarian | 2017-03-07 |
| 9570683 | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects | Kuk-Hwan Kim, Joanna Bettinger | 2017-02-14 |
| 9570678 | Resistive RAM with preferental filament formation region and methods | Hagop Nazarian | 2017-02-14 |
| 9564587 | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects | Kuk-Hwan Kim, Joanna Bettinger | 2017-02-07 |
| 9559299 | Scaling of filament based RRAM | — | 2017-01-31 |
| 9543359 | Switching device having a non-linear element | Wei Lu | 2017-01-10 |
| 9520561 | Controlling on-state current for two-terminal memory | Kuk-Hwan Kim, Ping-Hung Lu, Chen-Chun Chen | 2016-12-13 |
| 9520557 | Silicon based nanoscale crossbar memory | Wei Lu, Kuk-Hwan Kim | 2016-12-13 |
| 9508425 | Nanoscale metal oxide resistive switching element | Wei Lu | 2016-11-29 |
| 9502102 | MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory | Tanmay Kumar | 2016-11-22 |
| 9460788 | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor | Hagop Nazarian | 2016-10-04 |
| 9437297 | Write and erase scheme for resistive memory device | Hagop Nazarian | 2016-09-06 |
| 9425237 | Selector device for two-terminal memory | — | 2016-08-23 |