Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11973118 | Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing | Andréa-Carolina Quintero Colmena, Pablo Acosta Alba | 2024-04-30 |
| 11698488 | Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate | Fabrice Nemouchi, Charles Baudot, Yann Bogumilowicz, Elodie Ghegin | 2023-07-11 |
| 11600740 | Contacting area on germanium | Willy Ludurczak, Abdelkader Aliane, Jean-Michel Hartmann, Zouhir Mehrez | 2023-03-07 |
| 11450776 | Contacting area on germanium | Willy Ludurczak, Jean-Michel Hartmann, Abdelkader Aliane, Zouhir Mehrez | 2022-09-20 |
| 11075501 | Process for producing a component comprising III-V materials and contacts compatible with silicon process flows | Elodie Ghegin, Christophe Jany, Fabrice Nemouchi, Bertrand Szelag | 2021-07-27 |
| 10388653 | Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material | Elodie Ghegin, Fabrice Nemouchi | 2019-08-20 |
| 10361087 | Process for producing an intermetallic contact based on Ni on InxGa1-xAs | Seifeddine Zhiou, Fabrice Nemouchi, Patrice Gergaud | 2019-07-23 |
| 10068674 | Jet spouted bed type reactor device having a specific profile for CVD | Meryl Brothier, Dominique Moulinier, Carine Ablitzer | 2018-09-04 |