Issued Patents All Time
Showing 76–99 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5718761 | Method of forming crystalline compound semiconductor film | Jun-Ichi Hanna, Isamu Shimizu | 1998-02-17 |
| 5717475 | Electrode substrate, process for producing the substrate, liquid crystal device and process for producing the device | Masaru Kamio, Haruo Tomono, Yuji Matsuo | 1998-02-10 |
| 5703775 | Vehicle steering control system | Yorihisa Yamamoto, Yutaka Nishi, Takashi Nishimori, Hideki Machino | 1997-12-30 |
| 5690736 | Method of forming crystal | — | 1997-11-25 |
| 5659184 | III-V compound semiconductor device with a polycrystalline structure with minimum grain size of 0.6 .mu.m and printer and display device utilizing the same | Hideshi Kawasaki | 1997-08-19 |
| 5602057 | Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization | Hideshi Kawasaki | 1997-02-11 |
| 5548131 | Light-emitting device, optical recording head utilizing said device, and optical printer utilizing said optical recording head | Hideshi Kawasaki | 1996-08-20 |
| 5481457 | Vehicle steering system | Yorihisa Yamamoto, Yutaka Nishi, Takashi Nishimori | 1996-01-02 |
| 5448482 | Vehicle steering system | Yorihisa Yamamoto, Yutaka Nishi, Takashi Nishimori | 1995-09-05 |
| 5445992 | Process for forming a silicon carbide film | Tadashi Atoji | 1995-08-29 |
| 5425808 | Process for selective formation of III-IV group compound film | Takao Yonehara | 1995-06-20 |
| 5369290 | Light emission element using a polycrystalline semiconductor material of III-V group compound | Hideshi Kawasaki | 1994-11-29 |
| 5334864 | Process for selective formation of II-VI group compound film | Takao Yonehara | 1994-08-02 |
| 5304820 | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same | Kenji Yamagata, Takao Yonehara | 1994-04-19 |
| 5296087 | Crystal formation method | — | 1994-03-22 |
| 5281283 | Group III-V compound crystal article using selective epitaxial growth | Takao Yonehara | 1994-01-25 |
| 5250819 | Light emitting device having stepped non-nucleation layer | Hideji Kawasaki | 1993-10-05 |
| 5243200 | Semiconductor device having a substrate recess forming semiconductor regions | Hideshi Kawasaki | 1993-09-07 |
| 5232766 | Hybrid substrate | — | 1993-08-03 |
| 5134018 | Hybrid substrate | — | 1992-07-28 |
| 5130103 | Method for forming semiconductor crystal and semiconductor crystal article obtained by said method | Kenji Yamagata, Hideya Kumomi, Kozo Arao | 1992-07-14 |
| 5118365 | II-IV group compound crystal article and process for producing same | Takao Yonehara | 1992-06-02 |
| 5100691 | Process for selective formation of II-VI group compound flim | Takao Yonehara | 1992-03-31 |
| 5010033 | Process for producing compound semiconductor using an amorphous nucleation site | Kenji Yamagata, Takao Yonehara | 1991-04-23 |