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Anisotropic iron nitride permanent magnets |
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High isostatic strength honeycomb structures and extrusion dies therefor |
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Anisotropic iron nitride permanent magnets |
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Schottky barrier CMOS device and method |
John P. Snyder |
2012-04-10 |
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Method of manufacturing a CMOS device with zero soft error rate |
John P. Snyder |
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Dynamic Schottky barrier MOSFET device and method of manufacture |
John P. Snyder |
2011-11-15 |
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Metal source and drain transistor having high dielectric constant gate insulator |
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2011-09-20 |
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Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate |
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2011-05-10 |
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CMOS device with zero soft error rate |
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2010-10-26 |
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Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
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Schottky-barrier mosfet manufacturing method using isotropic etch process |
John P. Snyder |
2007-11-06 |
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Short-channel Schottky-barrier MOSFET device and manufacturing method |
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2007-05-22 |
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Virtual machine emulation in the memory space of a programmable processor |
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Schottky barrier CMOS fabrication method |
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Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
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2005-09-27 |
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Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
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2004-08-31 |