Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362082 | Coercivity-enhanced iron nitride nanoparticles with high saturation magnetization | Francis Johnson, Yiming Wu, L. Anderson Blackburn | 2025-07-15 |
| 11830644 | Anisotropic iron nitride permanent magnets | Francis Johnson, Richard W. Greger, Yiming Wu, Fan Zhang, Kathryn Sara DAMIEN | 2023-11-28 |
| 11312662 | High isostatic strength honeycomb structures and extrusion dies therefor | Thomas William Brew, Priyank Paras Jain, Konstantin Vladimirovich Khodosevich | 2022-04-26 |
| 11309107 | Anisotropic iron nitride permanent magnets | Francis Johnson, Richard W. Greger, Yiming Wu, Fan Zhang, Kathryn Sara DAMIEN | 2022-04-19 |
| 8154025 | Schottky barrier CMOS device and method | John P. Snyder | 2012-04-10 |
| 8084342 | Method of manufacturing a CMOS device with zero soft error rate | John P. Snyder | 2011-12-27 |
| 8058167 | Dynamic Schottky barrier MOSFET device and method of manufacture | John P. Snyder | 2011-11-15 |
| 8022459 | Metal source and drain transistor having high dielectric constant gate insulator | John P. Snyder | 2011-09-20 |
| 7939902 | Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate | John P. Snyder | 2011-05-10 |
| 7821075 | CMOS device with zero soft error rate | John P. Snyder | 2010-10-26 |
| 7294898 | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate | John P. Snyder | 2007-11-13 |
| 7291524 | Schottky-barrier mosfet manufacturing method using isotropic etch process | John P. Snyder | 2007-11-06 |
| 7221019 | Short-channel Schottky-barrier MOSFET device and manufacturing method | John P. Snyder | 2007-05-22 |
| 7124237 | Virtual machine emulation in the memory space of a programmable processor | Chad R. Overton, Sunil A. Mehta, Scott E. Errington | 2006-10-17 |
| 6974737 | Schottky barrier CMOS fabrication method | John P. Snyder | 2005-12-13 |
| 6949787 | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate | John P. Snyder | 2005-09-27 |
| 6784035 | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate | John P. Snyder | 2004-08-31 |