Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
JL

John M. Larson — 17 Patents

A2Avolare 2: 6 patents #2 of 3Top 70%
SSSpinnaker Semiconductor: 6 patents #2 of 2Top 100%
CICorning Incorporated: 1 patents #2,914 of 3,890Top 75%
STSeagate Technology: 1 patents #4,159 of 4,701Top 90%
Northfield, MN: #9 of 168 inventorsTop 6%
Minnesota: #4,335 of 52,454 inventorsTop 9%
Overall (All Time): #263,971 of 4,157,543Top 7%
17 Patents All Time
John M. Larson has been granted 17 US patents while listed as an inventor at Avolare 2. The first was granted in 2004 and the most recent in July 2025. John M. Larson ranks #263,971 of 4,157,543 US inventors in our database (top 6.3%). Patent records list John M. Larson in Northfield, MN, US.

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12362082 Coercivity-enhanced iron nitride nanoparticles with high saturation magnetization Francis Johnson, Yiming Wu, L. Anderson Blackburn 2025-07-15
11830644 Anisotropic iron nitride permanent magnets Francis Johnson, Richard W. Greger, Yiming Wu, Fan Zhang, Kathryn Sara DAMIEN 2023-11-28
11312662 High isostatic strength honeycomb structures and extrusion dies therefor Thomas William Brew, Priyank Paras Jain, Konstantin Vladimirovich Khodosevich 2022-04-26 $29,711,000
11309107 Anisotropic iron nitride permanent magnets Francis Johnson, Richard W. Greger, Yiming Wu, Fan Zhang, Kathryn Sara DAMIEN 2022-04-19
8154025 Schottky barrier CMOS device and method John P. Snyder 2012-04-10
8084342 Method of manufacturing a CMOS device with zero soft error rate John P. Snyder 2011-12-27
8058167 Dynamic Schottky barrier MOSFET device and method of manufacture John P. Snyder 2011-11-15
8022459 Metal source and drain transistor having high dielectric constant gate insulator John P. Snyder 2011-09-20
7939902 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate John P. Snyder 2011-05-10
7821075 CMOS device with zero soft error rate John P. Snyder 2010-10-26
7294898 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate John P. Snyder 2007-11-13
7291524 Schottky-barrier mosfet manufacturing method using isotropic etch process John P. Snyder 2007-11-06
7221019 Short-channel Schottky-barrier MOSFET device and manufacturing method John P. Snyder 2007-05-22
7124237 Virtual machine emulation in the memory space of a programmable processor Chad R. Overton, Sunil A. Mehta, Scott E. Errington 2006-10-17 $16,398,000
6974737 Schottky barrier CMOS fabrication method John P. Snyder 2005-12-13
6949787 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate John P. Snyder 2005-09-27
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate John P. Snyder 2004-08-31