Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11600452 | Vacuum-capacitor method and apparatus | — | 2023-03-07 |
| 10991518 | Vacuum-capacitor apparatus and method | — | 2021-04-27 |
| 10741334 | Method and associated capacitors having engineered electrodes with very high energy density | — | 2020-08-11 |
| 10460880 | Capacitors having engineered electrodes with very high energy density and associated method | — | 2019-10-29 |
| 9911542 | Capacitors having engineered electrodes with very high energy density | — | 2018-03-06 |
| 9418795 | Method and apparatus for capacitors having engineered electrodes with very high energy density | — | 2016-08-16 |
| 8760846 | Apparatus and method for capacitors having engineered electrodes with very high energy density | — | 2014-06-24 |
| 8154025 | Schottky barrier CMOS device and method | John M. Larson | 2012-04-10 |
| 8084342 | Method of manufacturing a CMOS device with zero soft error rate | John M. Larson | 2011-12-27 |
| 8058167 | Dynamic Schottky barrier MOSFET device and method of manufacture | John M. Larson | 2011-11-15 |
| 8039838 | Silicon thin film transistors, systems, and methods of making same | John M. Heitzinger | 2011-10-18 |
| 8022459 | Metal source and drain transistor having high dielectric constant gate insulator | John M. Larson | 2011-09-20 |
| 7977173 | Silicon thin film transistors, systems, and methods of making same | John M. Heitzinger | 2011-07-12 |
| 7939902 | Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate | John M. Larson | 2011-05-10 |
| 7821075 | CMOS device with zero soft error rate | John M. Larson | 2010-10-26 |
| 7674680 | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate | John Larson | 2010-03-09 |
| 7294898 | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate | John M. Larson | 2007-11-13 |
| 7291524 | Schottky-barrier mosfet manufacturing method using isotropic etch process | John M. Larson | 2007-11-06 |
| 7221019 | Short-channel Schottky-barrier MOSFET device and manufacturing method | John M. Larson | 2007-05-22 |
| 7052945 | Short-channel Schottky-barrier MOSFET device and manufacturing method | — | 2006-05-30 |
| 6974737 | Schottky barrier CMOS fabrication method | John M. Larson | 2005-12-13 |
| 6949787 | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate | John M. Larson | 2005-09-27 |
| 6931164 | Waveguide devices incorporating Kerr-based and other similar optically functional mediums | Steven M. Risser, Vincent D. McGinniss, David W. Nippa, Richard W. Ridgway | 2005-08-16 |
| 6784035 | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate | John M. Larson | 2004-08-31 |
| 6744103 | Short-channel schottky-barrier MOSFET device and manufacturing method | — | 2004-06-01 |