Issued Patents All Time
Showing 51–59 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5541123 | Method for forming a bipolar transistor having selected breakdown voltage | Richard K. Williams, Hamza Yilmaz, Jun-Wei Chen | 1996-07-30 |
| 5541125 | Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate | Richard K. Williams, Hamza Yilmaz, Jun-Wei Chen | 1996-07-30 |
| 5514608 | Method of making lightly-doped drain DMOS with improved breakdown characteristics | Richard K. Williams | 1996-05-07 |
| 5426328 | BICDMOS structures | Hamza Yilmaz, Richard K. Williams, Jun-Wei Chen | 1995-06-20 |
| 5422508 | BiCDMOS structure | Hamza Yilmaz, Richard K. Williams, Jun-Wei Chen | 1995-06-06 |
| 5416039 | Method of making BiCDMOS structures | Hamza Yilmaz, Richard K. Williams, Jun-Wei Chen | 1995-05-16 |
| 5386136 | Lightly-doped drain MOSFET with improved breakdown characteristics | Richard K. Williams | 1995-01-31 |
| 5374569 | Method for forming a BiCDMOS | Hamza Yilmaz, Richard K. Williams, Jun-Wei Chen | 1994-12-20 |
| 5374843 | Lightly-doped drain MOSFET with improved breakdown characteristics | Richard K. Williams, Mike F. Chang, David G. Grasso, Agnes Yeung, Juiping Chuang | 1994-12-20 |