Issued Patents All Time
Showing 126–150 of 155 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6832034 | Optical waveguide | Jun-Ying Zhang | 2004-12-14 |
| 6821348 | In-line deposition processes for circuit fabrication | Paul F. Baude, Patrick R. Fleming, Tommie W. Kelley, Dawn V. Muyres, Steven D. Theiss | 2004-11-23 |
| 6806520 | Method of making transistors | Steven D. Theiss, Silva K. Theiss | 2004-10-19 |
| 6791258 | Organic light emitting full color display panel | Robert C. Williams, III | 2004-09-14 |
| 6667215 | Method of making transistors | Steven D. Theiss, Paul F. Baude, Silva K. Theiss | 2003-12-23 |
| 6611096 | Organic electronic devices having conducting self-doped polymer buffer layers | Fred B. McCormick, Paul F. Baude, Yong Hsu, George D. Vernstrom, Manoj Nirmal +1 more | 2003-08-26 |
| 6376273 | Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device | Fen-Ren Chien, Thomas J. Miller | 2002-04-23 |
| 6057559 | II-VI laser diodes with short-period strained-layer superlattice quantum wells | Hwa Cheng, James M. DePuydt, Jun Qiu | 2000-05-02 |
| 6058123 | Selective etch for II-VI semiconductors | Paul F. Baude, Thomas J. Miller | 2000-05-02 |
| 5974070 | II-VI laser diode with facet degradation reduction structure | Paul F. Baude | 1999-10-26 |
| 5963573 | Light absorbing layer for II-VI semiconductor light emitting devices | Paul F. Baude | 1999-10-05 |
| 5879962 | III-V/II-VI Semiconductor interface fabrication method | James M. DePuydt, Kwok-Keung Law, Thomas J. Miller, James M. Gaines, Supratik Guha +1 more | 1999-03-09 |
| 5834330 | Selective etch method for II-VI semiconductors | Paul F. Baude, Thomas J. Miller | 1998-11-10 |
| 5818859 | Be-containing II-VI blue-green laser diodes | Thomas J. Miller, Paul F. Baude, Michael D. Pashley | 1998-10-06 |
| 5767534 | Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device | Fen-Ren Chien, Thomas J. Miller | 1998-06-16 |
| 5574296 | Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer | Robert M. Park, James M. DePuydt, Hwa Cheng | 1996-11-12 |
| 5538918 | Method of fabricating a buried-ridge II-VI laser diode | Jun Qiu, Hwa Cheng, James M. DePuydt | 1996-07-23 |
| 5513199 | Blue-green laser diode | James M. DePuydt, Hwa Cheng, Jun Qiu | 1996-04-30 |
| 5404027 | Buried ridge II-VI laser diode | Jun Qiu, Hwa Cheng, James M. DePuydt | 1995-04-04 |
| 5395791 | Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy | Hwa Cheng, James M. DePuydt, Jun Qiu | 1995-03-07 |
| 5396103 | Graded composition ohmic contact for P-type II-VI semiconductors | Jun Oiu, James M. DePuydt, Hwa Cheng | 1995-03-07 |
| 5319219 | Single quantum well II-VI laser diode without cladding | Hwa Cheng, James M. DePuydt, Jun Qiu | 1994-06-07 |
| 5291507 | Blue-green laser diode | Hwa Cheng, James M. DePuydt, Jun Qiu | 1994-03-01 |
| 5274269 | Ohmic contact for p-type group II-IV compound semiconductors | James M. DePuydt, Jun Qiu, Hwa Cheng | 1993-12-28 |
| 5248631 | Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals | Robert M. Park, James M. DePuydt, Hwa Cheng | 1993-09-28 |