Partial year: Data through Q3 2025 (Sept 30). Full-year totals not yet available.
YH

Yu-Lien Huang

TSMC: 18 patents #89 of 3,957Top 3%
Overall (2025): #1,757 of 469,880Top 1%
18
Patents 2025

Issued Patents 2025

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
12396239 Semiconductor device structure and methods of forming the same 2025-08-19
12382654 Semiconductor devices Guan-Ren Wang, Ching-Feng Fu 2025-08-05
12369293 Conductive feature formation 2025-07-22
12362239 Self aligned contact scheme 2025-07-15
12336236 Semiconductor device isolation features Guan-Ren Wang, Ching-Feng Fu 2025-06-17
12310051 Fin field-effect transistor device having contact plugs with re-entrant profile Guan-Ren Wang, Ching-Feng Fu, Yun-Min Chang 2025-05-20
12310043 Method of fabricating a semiconductor device Yi-Chen Lo, Li-Te Lin 2025-05-20
12302626 Asymmetric source/drain epitaxy 2025-05-13
12293947 Gap patterning for metal-to-source/drain plugs in a semiconductor device Ching-Feng Fu, Huan-Just Lin, Fu-Sheng Li, Tsai-Jung Ho, Bor Chiuan Hsieh +2 more 2025-05-06
12283527 Methods of forming semiconductor device structures 2025-04-22
12283625 Manufacturing method of semiconductor device 2025-04-22
12272731 Middle-of-line interconnect structure and manufacturing method Ching-Feng Fu, Huan-Just Lin 2025-04-08
12268027 Middle-of-line interconnect structure and manufacturing method Ching-Feng Fu, Huan-Just Lin 2025-04-01
12237419 Gate structures in transistor devices and methods of forming same Tze-Liang Lee, Jr-Hung Li, Chi-Hao Chang 2025-02-25
12218242 Semiconductor structure 2025-02-04
12211924 Semiconductor device and method of forming the same Tze-Liang Lee, Jr-Hung Li, Chi-Hao Chang, Bor Chiuan Hsieh 2025-01-28
12211937 Field effect transistor device with air gap spacer in source/drain contact Ching-Feng Fu, Guan-Ren Wang, Yun-Min Chang 2025-01-28
12191206 Method of manufacturing fin spacers having different heights using a polymer-generating etching process 2025-01-07