Issued Patents 2025
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433008 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2025-09-30 |
| 12432963 | Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer | Su-Hao Liu, Kuo-Ju Chen, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen +4 more | 2025-09-30 |
| 12408315 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2025-09-02 |
| 12376351 | Self-aligned contact air gap formation | Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen | 2025-07-29 |
| 12376357 | Fin field-effect transistor device and method | Sai-Hooi Yeong, Chi On Chui | 2025-07-29 |
| 12362187 | Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure | Jyh-Cherng Sheu, Sung-Li Wang, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong | 2025-07-15 |
| 12324202 | Semiconductor device structure and method for forming the same | Shih-Che Lin, Po-Yu Huang, Shih-Chieh Wu, I-Wen Wu, Chen-Ming Lee +2 more | 2025-06-03 |
| 12237231 | FINFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Chia-Ta Yu, Sai-Hooi Yeong, Feng-Cheng Yang | 2025-02-25 |
| 12218138 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2025-02-04 |