Issued Patents 2025
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433008 | FinFET structure with airgap and method of forming the same | Kai-Hsuan Lee, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2025-09-30 |
| 12376348 | Semiconductor device structure and method for forming the same | Sai-Hooi Yeong, Chi On Chui | 2025-07-29 |
| 12342616 | Semiconductor device structure and methods of forming the same | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Chih-Hao Wang +1 more | 2025-06-24 |
| 12342587 | Integrated circuit with nanostructure transistors and bottom dielectric insulators | Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Tsung-Han CHUANG, Kuo-Cheng Chiang +1 more | 2025-06-24 |
| 12336226 | Semiconductor device structure including stacked nanostructures | Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Tsung-Han CHUANG, Kai-Lin Chuang +2 more | 2025-06-17 |
| 12336240 | Transistor including dielectric barrier and manufacturing method thereof | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Kuo-Cheng Chiang, Chih-Hao Wang | 2025-06-17 |
| 12317540 | Method for manufacturing semiconductor structure with isolation feature | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Tsung-Han CHUANG, Kuo-Cheng Chiang | 2025-05-27 |
| 12310056 | Method of forming semiconductor device | Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui | 2025-05-20 |
| 12300732 | Gate all around transistor with dual inner spacers | Zhi-Chang Lin, Kuan-Ting Pan, Shih-Cheng Chen, Jung-Hung Chang, Lo-Heng Chang +1 more | 2025-05-13 |
| 12300735 | Air gap in inner spacers and methods of fabricating the same in field-effect transistors | Bo-Feng Young, Chih-Hao Wang, Kuan-Lun Cheng, Sai-Hooi Yeong | 2025-05-13 |
| 12272732 | Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof | Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Kuo-Cheng Chiang, Chih-Hao Wang | 2025-04-08 |
| 12211922 | Gate air spacer for fin-like field effect transistor | Bo-Feng Young, Sai-Hooi Yeong, Kuan-Lun Cheng, Chih-Hao Wang | 2025-01-28 |
| 12205998 | Semiconductor device with wrap around silicide and hybrid fin | Shih-Cheng Chen, Zhi-Chang Lin, Jung-Hung Chang, Tsung-Han CHUANG, Kuo-Cheng Chiang +1 more | 2025-01-21 |