Issued Patents 2025
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408315 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2025-09-02 |
| 12402379 | Epitaxial layer under a gate structure of a transistor | Yen-Chieh Huang, Yi-Hsien Tu, I-Hsieh Wong | 2025-08-26 |
| 12361981 | Using embedded switches for reducing capacitive loading on a memory system | Chia-En Huang, Sai-Hooi Yeong, Yih Wang, Yi-Ching Liu | 2025-07-15 |
| 12356647 | Epitaxial structures for fin-like field effect transistors | Sheng-Chen Wang, Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong | 2025-07-08 |
| 12349363 | Ferroelectric device and methods of forming the same | Hung-Wei Li, Sai-Hooi Yeong, Chih-Yu Chang, Wen-Ling Lu, Yu-Chien Chiu +3 more | 2025-07-01 |
| 12302553 | Vertical DRAM structure and method | Bo-Feng Young, Hung-Wei Li, Sai-Hooi Yeong, Chi On Chui | 2025-05-13 |
| 12237231 | FINFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Kai-Hsuan Lee, Sai-Hooi Yeong, Feng-Cheng Yang | 2025-02-25 |