Issued Patents 2025
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426296 | High-voltage semiconductor devices and methods of formation | Jhu-Min Song, Yu-Chang Jong | 2025-09-23 |
| 12396252 | Semiconductor structure and method for forming the same | Jhu-Min Song, Yu-Chang Jong | 2025-08-19 |
| 12369377 | Semiconductor structure and forming method thereof | Jhu-Min Song, Yu-Chang Jong | 2025-07-22 |
| 12363998 | Recessed gate for an MV device | Yi-Huan Chen, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei +2 more | 2025-07-15 |
| 12356658 | Semiconductor structure and method of forming the same | Yi-Huan Chen, Szu-Hsien Liu, Kong-Beng Thei, Huan-Chih Yuan, Jhu-Min Song | 2025-07-08 |
| 12349454 | Checkerboard dummy design for epitaxial open ratio | Yu-Chang Jong, Yi-Huan Chen, Tsung-Chieh Tsai, Szu-Hsien Liu, Huan-Chih Yuan +1 more | 2025-07-01 |
| 12261218 | Semiconductor structure and method of forming the same | Yi-Huan Chen, Szu-Hsien Liu, Kong-Beng Thei | 2025-03-25 |
| 12255207 | Boundary design for high-voltage integration on HKMG technology | Yi-Huan Chen, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao +1 more | 2025-03-18 |
| 12211926 | Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices | Kong-Beng Thei, Hsiao-Chin Tuan, Yi-Huan Chen, Alexander Kalnitsky | 2025-01-28 |
| 12191365 | Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device | Yi-Huan Chen, Kong-Beng Thei, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan | 2025-01-07 |