Issued Patents 2024
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11985832 | Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-05-14 |
| 11978762 | Planar capacitors with non-linear polar material staggered on a shared electrode | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni | 2024-05-07 |
| 11961877 | Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-04-16 |
| 11955512 | Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication | Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya +3 more | 2024-04-09 |
| 11955153 | Multi-element gain memory bit-cell having stacked and folded planar memory elements with and without offset | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni | 2024-04-09 |
| 11942133 | Pedestal-based pocket integration process for embedded memory | Noriyuki Sato, Niloy Mukherjee, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni | 2024-03-26 |
| 11935956 | TMD inverted nanowire integration | Kevin P. O'Brien, Carl Naylor, Chelsey Dorow, Kirby Maxey, Ashish Verma Penumatcha +4 more | 2024-03-19 |
| 11908950 | Charge-transfer spacers for stacked nanoribbon 2D transistors | Kirby Maxey, Chelsey Dorow, Kevin P. O'Brien, Carl Naylor, Ashish Verma Penumatcha +2 more | 2024-02-20 |
| 11910618 | Multi-element ferroelectric gain memory bit-cell having stacked and folded non-planar capacitors | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni | 2024-02-20 |
| 11908704 | Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren +8 more | 2024-02-20 |
| 11903219 | Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors | Rajeev Kumar Dokania, Amrita Mathuriya, Debo Olaosebikan, Noriyuki Sato, Sasikanth Manipatruni | 2024-02-13 |
| 11894417 | Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren +8 more | 2024-02-06 |
| 11869843 | Integrated trench and via electrode for memory device applications and methods of fabrication | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2024-01-09 |
| 11871584 | Multi-level hydrogen barrier layers for memory applications | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2024-01-09 |
| 11871583 | Ferroelectric memory devices | Noriyuki Sato, Niloy Mukherjee, Amrita Mathuriya, Rajeev Kumar Dokania, Sasikanth Manipatruni | 2024-01-09 |
| 11869928 | Dual hydrogen barrier layer for memory devices | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2024-01-09 |
| 11862517 | Integrated trench and via electrode for memory device applications | Noriyuki Sato, Niloy Mukherjee, Mauricio Manfrini, Rajeev Kumar Dokania, Somilkumar J. Rathi +2 more | 2024-01-02 |