| 12166031 |
Substrate-less electrostatic discharge (ESD) integrated circuit structures |
Biswajeet Guha, Brian J. Greene, Daniel Schulman, Chung-Hsun Lin, Curtis Tsai +1 more |
2024-12-10 |
| 12068314 |
Fabrication of gate-all-around integrated circuit structures having adjacent island structures |
Leonard P. GULER, Biswajeet Guha, Martin Weiss, Apratim Dhar, William T. BLANTON +7 more |
2024-08-20 |
| 12014959 |
Integrated nanowire and nanoribbon patterning in transistor manufacture |
Leonard P. GULER, Biswajeet Guha, Mark Armstrong, Tahir Ghani |
2024-06-18 |
| 11990472 |
Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates |
Leonard P. GULER, Michael K. Harper, Biswajeet Guha, Tahir Ghani, Niels Zussblatt +6 more |
2024-05-21 |
| 11929396 |
Cavity spacer for nanowire transistors |
Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang, Bruce Beattie +1 more |
2024-03-12 |
| 11908856 |
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani +5 more |
2024-02-20 |
| 11901458 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, Jun Sung Kang |
2024-02-13 |
| 11894368 |
Gate-all-around integrated circuit structures fabricated using alternate etch selective material |
Sudipto Naskar, Biswajeet Guha, Bruce Beattie, Tahir Ghani |
2024-02-06 |
| 11869891 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, Dax M. Crum +2 more |
2024-01-09 |
| 11869973 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Jun Sung Kang, Kai Loon Cheong, Biswajeet Guha +1 more |
2024-01-09 |