Issued Patents 2024
Showing 26–50 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12002753 | Electronic fuse with passive two-terminal phase change material and method of fabrication | Kevin W. Brew, Lan Yu, Ruilong Xie | 2024-06-04 |
| 12002850 | Nanosheet-based semiconductor structure with dielectric pillar | Julien Frougier, Ruilong Xie, Chanro Park | 2024-06-04 |
| 12002808 | Dual dielectric pillar fork sheet device | Ruilong Xie, Julien Frougier, Dimitri Houssameddine | 2024-06-04 |
| 11996480 | Vertical transistor with late source/drain epitaxy | Juntao Li, Shogo Mochizuki, Choonghyun Lee | 2024-05-28 |
| 11978796 | Contact and isolation in monolithically stacked VTFET | Chen Zhang, Ruilong Xie, Lan Yu | 2024-05-07 |
| 11978783 | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance | Shogo Mochizuki, Choonghyun Lee, Juntao Li | 2024-05-07 |
| RE49954 | Fabrication of nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2024-04-30 |
| 11963774 | Method probe with high density electrodes, and a formation thereof | — | 2024-04-23 |
| 11963469 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | Ruilong Xie, Carl Radens, Juntao Li | 2024-04-16 |
| 11963456 | MRAM memory array yield improvement | Dimitri Houssameddine, Julien Frougier, Ruilong Xie | 2024-04-16 |
| 11961544 | Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line | Julien Frougier, Dimitri Houssameddine, Ruilong Xie | 2024-04-16 |
| 11955526 | Thick gate oxide device option for nanosheet device | Ruilong Xie, Julien Frougier, Chanro Park, Veeraraghavan S. Basker | 2024-04-09 |
| 11942374 | Nanosheet field effect transistor with a source drain epitaxy replacement | Ruilong Xie, Julien Frougier, Chanro Park | 2024-03-26 |
| 11937521 | Structure and method to fabricate resistive memory with vertical pre-determined filament | Chanro Park, Ruilong Xie, Choonghyun Lee | 2024-03-19 |
| 11937522 | Confining filament at pillar center for memory devices | Dexin Kong, Takashi Ando, Juntao Li | 2024-03-19 |
| 11935930 | Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors | Julien Frougier, Ruilong Xie, Chanro Park, Andrew Gaul | 2024-03-19 |
| 11923363 | Semiconductor structure having bottom isolation and enhanced carrier mobility | Julien Frougier, Ruilong Xie, Chanro Park, Juntao Li | 2024-03-05 |
| 11923438 | Field-effect transistor with punchthrough stop region | Shogo Mochizuki, Juntao Li, Choonghyun Lee | 2024-03-05 |
| 11916073 | Stacked complementary field effect transistors | Ruilong Xie, Julien Frougier, Chanro Park | 2024-02-27 |
| 11908890 | Isolation structure for stacked vertical transistors | Juntao Li, Chen Zhang, Zhenxing Bi | 2024-02-20 |
| 11908937 | Vertical transport field-effect transistor with ring-shaped wrap-around contact | Xin Miao, Chen Zhang, Wenyu Xu | 2024-02-20 |
| 11901438 | Nanosheet transistor | Juntao Li, Heng Wu, Peng Xu | 2024-02-13 |
| 11894433 | Method and structure to improve stacked FET bottom EPI contact | Alexander Reznicek, Ruilong Xie, Chen Zhang | 2024-02-06 |
| 11895934 | Phase change memory with heater | Chanro Park, Julien Frougier, Ruilong Xie | 2024-02-06 |
| 11894462 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Dechao Guo, Sivananda K. Kanakasabapathy, Peng Xu | 2024-02-06 |