Issued Patents 2023
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11829863 | Neural network circuit device | Yitao Ma | 2023-11-28 |
| 11790966 | Nonvolatile logic circuit | Masanori Natsui, Takahiro Hanyu | 2023-10-17 |
| 11770981 | Magnetoresistive element and magnetic memory | Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Koichi Nishioka | 2023-09-26 |
| 11765981 | Magnetoresistance effect element and magnetic memory | Sadahiko Miura, Hiroaki Honjo, Hideo Sato, Shoji Ikeda | 2023-09-19 |
| 11705176 | Storage circuit provided with variable resistance type elements, and its test device | Hiroki Koike | 2023-07-18 |
| 11690299 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shinya Ishikawa, Shunsuke Fukami, Hideo Ohno | 2023-06-27 |
| 11631804 | Magnetoresistive effect element and magnetic memory | Yoshiaki Saito, Shoji Ikeda, Hideo Sato | 2023-04-18 |
| 11610615 | Lookup table circuit comprising a programmable logic device having a selection circuit connected to a memory cell array and separated from a path of a read circuit | Takahiro Hanyu, Daisuke Suzuki | 2023-03-21 |
| 11610614 | Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device | Yoshiaki Saito, Shoji Ikeda, Hideo Sato | 2023-03-21 |
| 11610083 | Method for calculating clustering evaluation value, and method for determining number of clusters | Hui Shen | 2023-03-21 |
| 11600313 | Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit | Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno | 2023-03-07 |
| 11563169 | Magnetic tunnel junction element and magnetic memory | Hideo Sato, Yoshihisa Horikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura +2 more | 2023-01-24 |
| 11557719 | Magnetoresistance effect element, circuit device, and circuit unit | Shunsuke Fukami, Aleksandr Kurenkov, William Andrew Borders, Hideo Ohno | 2023-01-17 |