HO

Hideo Ohno

TU Tohoku University: 4 patents #4 of 168Top 3%
📍 Sendai, NY: #2 of 2 inventorsTop 100%
Overall (2023): #47,642 of 537,848Top 9%
4
Patents 2023

Issued Patents 2023

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
11690299 Magnetoresistance effect element and magnetic memory Hideo Sato, Shinya Ishikawa, Shunsuke Fukami, Tetsuo Endoh 2023-06-27
11600313 Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit Takahiro Hanyu, Daisuke Suzuki, Tetsuo Endoh 2023-03-07
11563169 Magnetic tunnel junction element and magnetic memory Hideo Sato, Yoshihisa Horikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura +2 more 2023-01-24
11557719 Magnetoresistance effect element, circuit device, and circuit unit Shunsuke Fukami, Aleksandr Kurenkov, William Andrew Borders, Tetsuo Endoh 2023-01-17