Issued Patents 2023
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11721746 | Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features | Che-Cheng Chang, Jr-Jung Lin, Chih-Han Lin, Mu-Tsang Lin, Yung-Jung Chang | 2023-08-08 |