JL

Jr-Jung Lin

TSMC: 6 patents #542 of 4,064Top 15%
Overall (2023): #21,743 of 537,848Top 5%
6
Patents 2023

Issued Patents 2023

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
11764222 Method of forming a dummy fin between first and second semiconductor fins Shih-Yao Lin, Yun-Ting Chou, Chih-Han Lin 2023-09-19
11721746 Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features Che-Cheng Chang, Shih-Hao Chen, Chih-Han Lin, Mu-Tsang Lin, Yung-Jung Chang 2023-08-08
11670711 Metal gate electrode of a semiconductor device Chih-Han Lin, Jin-Aun Ng, Ming-Ching Chang, Chao-Cheng Chen 2023-06-06
11605564 Method and structure for FinFET isolation Che-Cheng Chang, Chih-Han Lin 2023-03-14
11605719 Gate structure with desired profile for semiconductor devices Chih-Ping Wang, Chao-Cheng Chen, Chi-Wei Yang 2023-03-14
11600717 Dummy FIN profile control to enlarge gate process window Shih-Yao Lin, Pei-Hsiu Wu, Chih-Ping Wang, Chih-Han Lin, Yun-Ting Chou +1 more 2023-03-07