Issued Patents 2023
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2023-12-19 |
| 11758820 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Ru-Ying Tong | 2023-09-12 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2023-07-04 |
| 11683994 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Ru-Ying Tong | 2023-06-20 |
| 11672182 | Seed layer for multilayer magnetic materials | Ru-Ying Tong | 2023-06-06 |
| 11609296 | Method for measuring saturation magnetization of magnetic films and multilayer stacks | Santiago Serrano Guisan, Luc Thomas, Son Le | 2023-03-21 |
| 11597993 | Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidation | Sahil Patel, Yu-Jen Wang | 2023-03-07 |
| 11573270 | Electrical testing apparatus for spintronics devices | Huanlong Liu, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2023-02-07 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Luc Thomas, Po-Kang Wang +2 more | 2023-01-31 |
| 11563170 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2023-01-24 |