PF

Peijie Feng

QU Qualcomm: 2 patents #676 of 2,295Top 30%
📍 Clifton Park, NY: #44 of 141 inventorsTop 35%
🗺 New York: #2,120 of 11,993 inventorsTop 20%
Overall (2023): #119,407 of 537,848Top 25%
2
Patents 2023

Issued Patents 2023

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11855198 Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity Chenjie TANG, Ye Lu, Junjing Bao 2023-12-26
11545555 Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same Stanley Seungchul Song, Kern Rim 2023-01-03