HM

Hiroyuki Miyazoe

IBM: 4 patents #602 of 6,852Top 9%
TL Tokyo Electron Limited: 1 patents #287 of 865Top 35%
📍 White Plains, NY: #20 of 183 inventorsTop 15%
🗺 New York: #828 of 11,993 inventorsTop 7%
Overall (2023): #47,671 of 537,848Top 9%
4
Patents 2023

Issued Patents 2023

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
11844290 Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices Devi Koty, Qingyun Yang, Hongwen Yan, Takashi Ando, Marinus Hopstaken 2023-12-12
11730070 Resistive random-access memory device with step height difference Seyoung Kim, Asit Ray, Takashi Ando 2023-08-15
11647639 Conductive bridging random access memory formed using selective barrier metal removal Takashi Ando 2023-05-09
11647680 Oxide-based resistive memory having a plasma-exposed bottom electrode Takashi Ando, Eduard A. Cartier, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more 2023-05-09