CH

Carissima Marie Hudson

GC Globalwafers Co.: 6 patents #1 of 79Top 2%
📍 Holden, MO: #1 of 86 inventorsTop 2%
🗺 Missouri: #37 of 2,401 inventorsTop 2%
Overall (2023): #23,835 of 537,848Top 5%
6
Patents 2023

Issued Patents 2023

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
11767611 Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski JaeWoo Ryu, JunHwan Ji, WooJin Yoon 2023-09-26
11739437 Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth HyungMin Lee, JaeWoo Ryu, Richard J. Phillips, Robert W. Standley 2023-08-29
11680335 Single crystal silicon ingot having axial uniformity Jae Woo Ryu 2023-06-20
11680336 Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method Jae Woo Ryu 2023-06-20
11655559 High resistivity single crystal silicon ingot and wafer having improved mechanical strength Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster 2023-05-23
11655560 High resistivity single crystal silicon ingot and wafer having improved mechanical strength Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster 2023-05-23