QT

Qian Tao

YC Yangtze Memory Technologies Co.: 7 patents #12 of 257Top 5%
Micron: 2 patents #505 of 1,508Top 35%
📍 Beijing, ID: #3 of 6 inventorsTop 50%
Overall (2022): #9,611 of 548,613Top 2%
9
Patents 2022

Issued Patents 2022

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
11502094 Multi-level vertical memory device including inter-level channel connector Ruo Fang Zhang, Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu 2022-11-15
11462474 Three-dimensional memory devices having a plurality of NAND strings Jifeng Zhu, Zhenyu Lu, Jun Chen, Yushi Hu, Simon Shi-Ning Yang +1 more 2022-10-04
11380701 Memory device and forming method thereof Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Yushi Hu +5 more 2022-07-05
11329061 Method for improving channel hole uniformity of a three-dimensional memory device Li Xiao, Yushi Hu, Xiao Tian Cheng, Jian Xu, Haohao Yang +2 more 2022-05-10
11309327 Method for forming channel hole plug of three-dimensional memory device Li Xiao, Zhenyu Lu, Yushi Hu, Jun Chen, Longdong Liu +1 more 2022-04-19
11289487 Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods Matthew N. Rocklein, Paul A. Paduano, Sanket S. Kelkar, Christopher W. Petz, Zhe Song +1 more 2022-03-29
11271004 Memory device and forming method thereof Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Yushi Hu +5 more 2022-03-08
11264397 Source structure of three-dimensional memory device and method for forming the same Yushi Hu, Zhenyu Lu, Jun Chen, Simon Shi-Ning Yang, Steve Weiyi Yang 2022-03-01
11244951 Memory cells Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Kirk D. Prall, Ashonita A. Chavan 2022-02-08