Issued Patents 2022
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527443 | Residue-free metal gate cutting for fin-like field effect transistor | Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ming-Ching Chang | 2022-12-13 |
| 11508582 | Cut metal gate processes | Shu-Uei Jang, Ya-Yi Tsai, An Chyi Wei, Shu-Yuan Ku | 2022-11-22 |
| 11502076 | Semiconductor structure cutting process and structures formed thereby | Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang, Li-Wei Yin +2 more | 2022-11-15 |
| 11495501 | Fin field-effect transistor devices and methods of forming the same | Chih-Chang Hung, Chieh-Ning Feng, Chun-Liang Lai, Yih-Ann Lin | 2022-11-08 |
| 11404321 | Semiconductor structure and method of manufacturing the same | Yuan-Sheng Huang | 2022-08-02 |
| 11380775 | Gate structure of a semiconductor device and method of making | Ming Zhu, Hui-Wen Lin, Harry-Hak-Lay Chuang, Bao-Ru Young, Yuan-Sheng Huang +4 more | 2022-07-05 |
| 11355616 | Air spacers around contact plugs and method forming same | Chen-Huang Huang, Ming-Jhe Sie, Yih-Ann Lin, An Chyi Wei | 2022-06-07 |
| 11329140 | Semiconductor device and method of manufacture | Chen-Huang Huang, Ming-Jhe Sie, Cheng-Chung Chang, Shao-Hua Hsu, Shu-Uei Jang +2 more | 2022-05-10 |
| 11302816 | Semiconductor structure and method for forming the same | Yuan-Sheng Huang | 2022-04-12 |
| 11289481 | Single metal that performs N work function and P work function in a high-K/metal gate | Yih-Ann Lin, Donald Y. Chao, Yi-Shien Mor, Kuo-Tai Huang | 2022-03-29 |
| 11282967 | Nanostructure field-effect transistor device and method of forming | Cheng-Chung Chang, Hsiu-Hao Tsao, Ming-Jhe Sie, Shun-Hui Yang, Chen-Huang Huang +1 more | 2022-03-22 |
| 11264287 | Semiconductor device with cut metal gate and method of manufacture | Yi-Chun Chen, Shu-Yuan Ku, Ya-Yi Tsai, I-Wei Yang | 2022-03-01 |