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Memory cell for dot product operation in compute-in-memory chip |
Zhongze Wang, Yandong Gao, Xiaochun Zhu, Xia Li |
2022-11-15 |
| 11487507 |
Multi-bit compute-in-memory (CIM) arrays employing bit cell circuits optimized for accuracy and power efficiency |
Zhongze Wang, Periannan Chidambaram |
2022-11-01 |
| 11411092 |
Field effect transistor (FET) comprising inner spacers and voids between channels |
Junjing Bao, Peijie Feng, Chenjie TANG |
2022-08-09 |
| 11380685 |
Semiconductor device with superlattice fin |
Junjing Bao, Chenjie TANG, Peijie Feng |
2022-07-05 |
| 11302773 |
Back-end-of-line integrated metal-insulator-metal capacitor |
Junjing Bao, Haitao Cheng, Chao Song |
2022-04-12 |
| 11296083 |
Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuits |
Lixin Ge, Kwanyong LIM, Jun Chen |
2022-04-05 |
| 11289365 |
Air gap underneath passive devices |
Junjing Bao, Haitao Cheng |
2022-03-29 |
| 11272598 |
Transconductance circuits and methods |
Jinhua Ni |
2022-03-08 |
| 11239307 |
Metal-oxide-metal capacitor from subtractive back-end-of-line scheme |
John Jianhong Zhu, Junjing Bao |
2022-02-01 |
| D940121 |
Mobile phone case |
— |
2022-01-04 |