| 11411092 |
Field effect transistor (FET) comprising inner spacers and voids between channels |
Ye Lu, Peijie Feng, Chenjie TANG |
2022-08-09 |
| 11404373 |
Hybrid low resistance metal lines |
John Jianhong Zhu, Giridhar Nallapati |
2022-08-02 |
| 11387335 |
Optimized contact structure |
Jun Yuan, Peijie Feng |
2022-07-12 |
| 11380685 |
Semiconductor device with superlattice fin |
Ye Lu, Chenjie TANG, Peijie Feng |
2022-07-05 |
| 11335683 |
Device channel profile structure |
Haining Yang, ChihWei Kuo |
2022-05-17 |
| 11302773 |
Back-end-of-line integrated metal-insulator-metal capacitor |
Ye Lu, Haitao Cheng, Chao Song |
2022-04-12 |
| 11295991 |
Complementary cell circuits employing isolation structures for defect reduction and related methods of fabrication |
Haining Yang |
2022-04-05 |
| 11289365 |
Air gap underneath passive devices |
Ye Lu, Haitao Cheng |
2022-03-29 |
| 11239307 |
Metal-oxide-metal capacitor from subtractive back-end-of-line scheme |
John Jianhong Zhu, Ye Lu |
2022-02-01 |