| 11501815 |
Sensing scheme for a memory with shared sense components |
Yuan He, Tae H. Kim |
2022-11-15 |
| 11475934 |
Ferroelectric memory cell sensing |
Christopher John Kawamura |
2022-10-18 |
| 11450740 |
Integrated memory comprising gated regions between charge-storage devices and access devices |
Charles L. Ingalls |
2022-09-20 |
| 11450668 |
Integrated memory comprising secondary access devices between digit lines and primary access devices |
Charles L. Ingalls |
2022-09-20 |
| 11437381 |
Integrated assemblies having voltage sources coupled to shields and/or plate electrodes through capacitors |
Jiyun Li |
2022-09-06 |
| 11392468 |
Storing memory array operational information in non-volatile subarrays |
Christopher John Kawamura, Charles L. Ingalls |
2022-07-19 |
| 11380388 |
Memory arrays with vertical thin film transistors coupled between digit lines |
Charles L. Ingalls |
2022-07-05 |
| 11264394 |
Integrated components which have both horizontally-oriented transistors and vertically-oriented transistors |
Charles L. Ingalls |
2022-03-01 |
| 11250900 |
Half density ferroelectric memory and operation |
Charles L. Ingalls |
2022-02-15 |
| 11238913 |
Cell-based reference voltage generation |
Christopher John Kawamura |
2022-02-01 |
| 11232828 |
Integrated memory assemblies comprising multiple memory array decks |
Charles L. Ingalls |
2022-01-25 |
| 11227861 |
Integrated assemblies comprising sense-amplifier-circuitry and wordline-driver-circuitry under memory cells of a memory array |
Hiroki Fujisawa, Charles L. Ingalls, Richard J. Hill, Gurtej S. Sandhu |
2022-01-18 |
| 11222975 |
Memory arrays with vertical transistors and the formation thereof |
Fatma Arzum Simsek-Ege, Steve V. Cole, Toby D. Robbs |
2022-01-11 |
