| 11532832 |
All-vanadium sulfate acid redox flow battery system |
Zimin Nie, Wei Wang, Xiaoliang Wei, Bin Li, Vincent L. Sprenkle |
2022-12-20 |
| 11502099 |
Three-dimensional memory devices with architecture of increased number of bit lines |
Lei Xue |
2022-11-15 |
| 11449347 |
Time-multiplexed implementation of hardware accelerated functions in a programmable integrated circuit |
Raymond Kong, Brian S. Martin, Hao Yu, Ashish Sirasao |
2022-09-20 |
| 11430766 |
Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same |
Weihua Cheng |
2022-08-30 |
| 11430756 |
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same |
Zongliang Huo, Jifeng Zhu, Jun Chen, Zi Qun Hua, Li Xiao |
2022-08-30 |
| 11424208 |
Semiconductor devices having adjoined via structures formed by bonding and methods for forming the same |
— |
2022-08-23 |
| 11393530 |
Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
— |
2022-07-19 |
| 11367729 |
Bonded semiconductor devices having processor and NAND flash memory and methods for forming the same |
Weihua Cheng |
2022-06-21 |
| 11349072 |
Resistive memory architectures with multiple memory cells per access device |
Michael P. Violette |
2022-05-31 |
| 11316107 |
Semiconductor devices and related methods |
Kunal R. Parekh |
2022-04-26 |
| 11302715 |
Three-dimensional memory devices and fabrication methods thereof |
Li Xiao, Yu Ting Zhou |
2022-04-12 |
| 11302706 |
Bonded unified semiconductor chips and fabrication and operation methods thereof |
Weihua Cheng |
2022-04-12 |
| 11302700 |
Bonded semiconductor devices having programmable logic device and NAND flash memory and methods for forming the same |
Weihua Cheng |
2022-04-12 |
| 11296107 |
Channel hole and bitline architecture and method to improve page or block size and performance of 3D NAND |
— |
2022-04-05 |
| 11282894 |
Cross-point memory with self-defined memory elements |
— |
2022-03-22 |
| 11235006 |
Inhibiting or alleviating agent for Aβ-induced damage |
— |
2022-02-01 |
