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Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
Raghuveer S. Makala, Peter Rabkin |
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Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Peter Rabkin, Raghuveer S. Makala |
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| 11495613 |
Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
Raghuveer S. Makala, Peter Rabkin |
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| 11398451 |
Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die |
Raghuveer S. Makala, Peter Rabkin |
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| 11374020 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Peter Rabkin, Raghuveer S. Makala |
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Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same |
Raghuveer S. Makala, Peter Rabkin |
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Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same |
Raghuveer S. Makala, Peter Rabkin |
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| 11282857 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same |
Peter Rabkin, Raghuveer S. Makala |
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| 11244734 |
Modified verify scheme for programming a memory apparatus |
Henry Chin, Ching-Huang Lu |
2022-02-08 |