| 11533024 |
Multi-zone radio frequency transistor amplifiers |
Kwangmo Chris Lim, Basim Noori, Qianli Mu, Marvin Marbell, Alexander Komposch |
2022-12-20 |
| 11502178 |
Field effect transistor with at least partially recessed field plate |
Kyle Bothe, Jia Guo, Terry Alcorn, Fabian Radulescu |
2022-11-15 |
| 11476359 |
Structures for reducing electron concentration and process for reducing electron concentration |
Jia Guo, Saptharishi Sriram |
2022-10-18 |
| 11356070 |
RF amplifiers having shielded transmission line structures |
Kwangmo Chris Lim, Basim Noori, Qianli Mu, Marvin Marbell, Alexander Komposch |
2022-06-07 |
| 11355600 |
High electron mobility transistors having improved drain current drift and/or leakage current performance |
Kyoung-Keun Lee, Fabian Radulescu |
2022-06-07 |
| 11316028 |
Nitride-based transistors with a protective layer and a low-damage recess |
Richard Peter Smith, Zoltan Ring |
2022-04-26 |
| 11239802 |
Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance |
Qianli Mu, Zulhazmi Mokhti, Jia Guo |
2022-02-01 |