DN

Dimin Niu

Samsung: 12 patents #198 of 16,990Top 2%
AL Alibaba: 3 patents #9 of 399Top 3%
Overall (2021): #3,699 of 548,734Top 1%
15
Patents 2021

Issued Patents 2021

Patent #TitleCo-InventorsDate
11188471 Cache coherency for host-device systems Lide Duan, Hongyu Liu, Shuangchen Li, Hongzhong Zheng 2021-11-30
11175853 Systems and methods for write and flush support in hybrid memory Mu-Tien Chang, Hongzhong Zheng, Heehyun Nam, Youngjin Cho, Sun-Young Lim 2021-11-16
11151006 HBM RAS cache architecture Krishna T. Malladi, Hongzhong Zheng 2021-10-19
11138135 Scale-out high bandwidth memory system Krishna T. Malladi, Hongzhong Zheng, Peng Gu 2021-10-05
11100193 Dataflow accelerator architecture for general matrix-matrix multiplication and tensor computation in deep learning Peng Gu, Krishna T. Malladi, Hongzhong Zheng 2021-08-24
11079936 3-D stacked memory with reconfigurable compute logic Mu-Tien Chang, Prasun Gera, Hongzhong Zheng 2021-08-03
11068200 Method and system for memory control Lide Duan, Yuhao Wang, Xiaoxin Fan, Zhibin Xiao 2021-07-20
11048645 Memory module, operation method therof, and operation method of host Sun-Young Lim, Jae Gon Lee 2021-06-29
11029879 Page size synchronization and page size aware scheduling method for non-volatile memory dual in-line memory module (NVDIMM) over memory channel Mu-Tien Chang, Hongzhong Zheng, Sun-Young Lim, Jae Gon Lee, Indong Kim 2021-06-08
11010242 DRAM assist error correction mechanism for DDR SDRAM interface Mu-Tien Chang, Hongzhong Zheng, Hyun-Joong Kim, Won-Hyung Song, Jangseok Choi 2021-05-18
10978134 Method and device for refreshing memory Hongzhong Zheng, Shuangchen Li 2021-04-13
10977118 DRAM assist error correction mechanism for DDR SDRAM interface Mu-Tien Chang, Hongzhong Zheng, Hyun-Joong Kim, Won-Hyung Song, Jangseok Choi 2021-04-13
10929026 Multi-cell structure for non-volatile resistive memory Mu-Tien Chang, Hongzhong Zheng 2021-02-23
10915451 Bandwidth boosted stacked memory Krishna T. Malladi, Mu-Tien Chang, Hongzhong Zheng 2021-02-09
10908993 Method to deliver in-DRAM ECC information through DDR bus Mu-Tien Chang, Hongzhong Zheng, Hyun-Joong Kim, Won-Hyung Song, Jangseok Choi 2021-02-02