| 11204828 |
Management of corruptive read in memory systems |
Zhengang Chen |
2021-12-21 |
| 11107550 |
Self-adaptive read voltage adjustment using boundary error statistics for memories with time-varying error rates |
Zhengang Chen |
2021-08-31 |
| 11056166 |
Performing a refresh operation based on a characteristic of a memory sub-system |
Seungjune Jeon, Zhengang Chen, Zhenlei Shen, Charles See Yeung Kwong |
2021-07-06 |
| 11037637 |
Defect detection in memories with time-varying bit error rate |
Zhengang Chen, Sai Krishna Mylavarapu, Zhenlei Shen, Charles See Yeung Kwong |
2021-06-15 |
| 11023171 |
Performing a refresh operation based on a write to read time difference |
Zhengang Chen |
2021-06-01 |
| 11023172 |
Selecting read voltage using write transaction data |
Zhengang Chen |
2021-06-01 |
| 11004534 |
Preemptive read refresh in memories with time-varying error rates |
Zhengang Chen |
2021-05-11 |
| 10992323 |
Early decoding termination for a memory sub-system |
Ying Yu Tai, Jiangli Zhu |
2021-04-27 |
| 10971228 |
Adaptive application of voltage pulses to stabilize memory cell voltage levels |
Murong Lang, Zhenming Zhou |
2021-04-06 |
| 10963342 |
Metadata-assisted encoding and decoding for a memory sub-system |
Ying Yu Tai, Jiangli Zhu |
2021-03-30 |
| 10942809 |
Changing of error correction codes based on the wear of a memory sub-system |
Ying Yu Tai, Jiangli Zhu |
2021-03-09 |
| 10916292 |
Performing a refresh operation based on system characteristics |
Zhenming Zhou |
2021-02-09 |
| 10892029 |
Self-adaptive read voltage adjustment using directional error statistics for memories with time-varying error rates |
Zhengang Chen |
2021-01-12 |
