| 11127830 |
Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods |
John Smythe, Silvia Borsari, Sutharsan Ketharanathan |
2021-09-21 |
| 11107830 |
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies |
Byeung Chul Kim, Richard J. Hill, Shyam Surthi |
2021-08-31 |
| 11037956 |
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies |
Byeung Chul Kim, Richard J. Hill, Purnima Narayanan, Shyam Surthi |
2021-06-15 |
| 10964536 |
Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio |
Paul A. Paduano, Gurtej S. Sandhu, John Smythe, Matthew N. Rocklein |
2021-03-30 |
| 10937654 |
Methods of doping a silicon-containing material and methods of forming a semiconductor device |
John Smythe, Witold Kula |
2021-03-02 |
