| 11158718 |
Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material |
Jordan D. Greenlee, Rita J. Klein, John Mark Meldrim |
2021-10-26 |
| 10998481 |
Ohmic contacts for semiconductor structures |
Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou |
2021-05-04 |
| 10957644 |
Integrated structures with conductive regions having at least one element from group 2 of the periodic table |
Christopher W. Petz |
2021-03-23 |
| 10957775 |
Assemblies having conductive structures with three or more different materials |
David Ross Economy, Rita J. Klein, Jordan D. Greenlee, John Mark Meldrim, Brenda D. Kraus |
2021-03-23 |
| 10943921 |
Methods of forming integrated assemblies |
Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim |
2021-03-09 |
| 10923657 |
Methods of forming memory cells and memory devices |
Tsz W. Chan, Durai Vishak Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu |
2021-02-16 |
| 10916564 |
Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars |
David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more |
2021-02-09 |
