CH

Carissima Marie Hudson

GC Globalwafers Co.: 5 patents #2 of 81Top 3%
📍 Holden, MO: #1 of 100 inventorsTop 1%
🗺 Missouri: #40 of 2,600 inventorsTop 2%
Overall (2021): #34,921 of 548,734Top 7%
5
Patents 2021

Issued Patents 2021

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
11142844 High resistivity single crystal silicon ingot and wafer having improved mechanical strength Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster 2021-10-12
11111596 Single crystal silicon ingot having axial uniformity Jae Woo Ryu 2021-09-07
11111597 Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method Jae Woo Ryu 2021-09-07
11047066 Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots JaeWoo Ryu 2021-06-29
10954606 Methods for modeling the impurity concentration of a single crystal silicon ingot JaeWoo Ryu 2021-03-23