Issued Patents 2020
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879124 | Method to form a fully strained channel region | Chun-Chieh Wang, Huai-Tei Yang, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2020-12-29 |
| 10879396 | Semiconductor device with source/drain structures | Shahaji B. More, Chun-Chieh Wang, Cheng-Han Lee, Shih-Chieh Chang | 2020-12-29 |
| 10879240 | Fin field effect transistor (FinFET) device structure | Chun-Chieh Wang, Shih-Chieh Chang, Yi-Min Huang, Shahaji B. More, Tsung-Lin Lee | 2020-12-29 |
| 10879126 | Semiconductor device and method | Shahaji B. More, Cheng-Han Lee, Shih-Chieh Chang | 2020-12-29 |
| 10867799 | FinFET device and methods of forming same | Chun-Chieh Wang, Shih-Chieh Chang, Cheng-Han Lee, Huai-Tei Yang, Shahaji B. More | 2020-12-15 |
| 10734524 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee | 2020-08-04 |
| 10672886 | Structure and method for high-k metal gate | Shahaji B. More, Cheng-Han Lee, Shih-Chieh Chang, Chun-Chieh Wang | 2020-06-02 |
| 10636909 | Formation method of semiconductor device with source/drain structures | Shahaji B. More, Chun-Chieh Wang, Cheng-Han Lee, Shih-Chieh Chang | 2020-04-28 |
| 10629496 | Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers | Shahaji B. More, Chun-Chieh Wang, Shih-Chieh Chang | 2020-04-21 |
| 10535736 | Fully strained channel | Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Chun-Chieh Wang, Cheng-Han Lee | 2020-01-14 |