Issued Patents 2020
Showing 1–25 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879364 | Semiconductor structure and manufacturing method thereof | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-29 |
| 10872965 | Method of forming semiconductor structure | Chang-Yin Chen, Che-Cheng Chang | 2020-12-22 |
| 10872890 | Semiconductor device | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-22 |
| 10872968 | Semiconductor device | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-22 |
| 10867865 | Method and structure for FinFET isolation | Che-Cheng Chang, Jr-Jung Lin | 2020-12-15 |
| 10868002 | Semiconductor structure and manufacturing method thereof | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-15 |
| 10868189 | Semiconductor device and manufacturing method thereof | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-15 |
| 10868139 | Controlling profiles of replacement gates | Kuei-Yu Kao, Ming-Ching Chang, Chan-Lon Yang, Chao-Cheng Chen, Syun-Ming Jang | 2020-12-15 |
| 10868012 | Semiconductor device and manufacturing method thereof | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-15 |
| 10868188 | Semiconductor device and method | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-15 |
| 10868138 | Metal gate formation through etch back process | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-15 |
| 10868179 | Fin-type field effect transistor structure and manufacturing method thereof | Che-Cheng Chang | 2020-12-15 |
| 10861977 | FinFET isolation structure | Che-Cheng Chang, Horng-Huei Tseng | 2020-12-08 |
| 10854742 | Metal gate electrode of a semiconductor device | Jr-Jung Lin, Jin-Aun Ng, Ming-Ching Chang, Chao-Cheng Chen | 2020-12-01 |
| 10854504 | Semiconductor structure and manufacturing method thereof | Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Yung-Jung Chang | 2020-12-01 |
| 10854507 | Method of forming trenches | Che-Cheng Chang | 2020-12-01 |
| 10854542 | Via structure and methods thereof | Che-Cheng Chang | 2020-12-01 |
| 10840153 | Notched gate structure fabrication | Chang-Yin Chen, Che-Cheng Chang | 2020-11-17 |
| 10840242 | Fin structure and method of forming same through two-step etching processes | Che-Cheng Chang, Horng-Huei Tseng | 2020-11-17 |
| 10840144 | Structure and formation method of semiconductor device structure | Che-Cheng Chang | 2020-11-17 |
| 10840379 | Semiconductor device | Che-Cheng Chang | 2020-11-17 |
| 10811506 | Self-aligned metal gate etch back process and device | Che-Cheng Chang, Horng-Huei Tseng | 2020-10-20 |
| 10811536 | FinFET device and method of forming and monitoring quality of the same | Chang-Yin Chen, Che-Cheng Chang, Horng-Huei Tseng | 2020-10-20 |
| 10811412 | Method of fabricating semiconductor device | Che-Cheng Chang, Horng-Huei Tseng | 2020-10-20 |
| 10811538 | Semiconductor device with gate stack | Che-Cheng Chang | 2020-10-20 |