Issued Patents 2020
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10861802 | Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit | Christian Rivero, Pascal Fornara, Mathieu Lisart | 2020-12-08 |
| 10770547 | Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses | Pascal Fornara, Christian Rivero | 2020-09-08 |
| 10714583 | MOS transistor with reduced hump effect | Christian Rivero, Pascal Fornara, Julien Delalleau | 2020-07-14 |