| 10854522 |
Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas |
Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more |
2020-12-01 |
| 10777472 |
IC with test structures embedded within a contiguous standard cell area |
Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more |
2020-09-15 |
| 10600961 |
Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance |
Wei Yi, Kenneth K. Tsang, Xiwei Bai, Jack A. Crowell, Elias A. Flores |
2020-03-24 |
| 10593604 |
Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more |
2020-03-17 |