JL

Jeffrey L. Libbert

GC Globalwafers Co.: 6 patents #2 of 65Top 4%
📍 O'Fallon, MO: #3 of 93 inventorsTop 4%
🗺 Missouri: #35 of 2,681 inventorsTop 2%
Overall (2020): #18,859 of 565,922Top 4%
7
Patents 2020

Issued Patents 2020

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
10832937 High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency Gang Wang, Shawn George Thomas, Qingmin Liu 2020-11-10
10825718 Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate Igor Peidous 2020-11-03
10796946 Method of manufacture of a semiconductor on insulator structure Henry F. Erk, Sasha Kweskin, Mayank Bulsara 2020-10-06
10784146 Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress Gang Wang, Shawn George Thomas, Igor Peidous 2020-09-22
10741437 High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency Gang Wang, Shawn George Thomas, Qingmin Liu 2020-08-11
10658227 Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress Gang Wang, Shawn George Thomas, Igor Peidous 2020-05-19
10546771 High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency Gang Wang, Shawn George Thomas, Qingmin Liu 2020-01-28