Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10515966 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu | 2019-12-24 |
| 10510619 | Semiconductor structure and method for manufacturing the same | Shih-Hsiang Chiu, Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang | 2019-12-17 |