Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10515966 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen | 2019-12-24 |
| 10516024 | Raised epitaxial LDD in MuGFETs and methods for forming the same | Hou-Yu Chen, Shyh-Horng Yang | 2019-12-24 |