| 10446727 |
Ohmic contacts for semiconductor structures |
Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou |
2019-10-15 |
| 10418554 |
Methods of forming memory cells and semiconductor devices |
Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu |
2019-09-17 |
| 10381072 |
Phase change memory stack with treated sidewalls |
Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz |
2019-08-13 |
| 10361214 |
Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures |
Jordan D. Greenlee, John Mark Meldrim |
2019-07-23 |
| 10354989 |
Integrated assemblies and methods of forming integrated assemblies |
Daniel Billingsley, Christopher W. Petz, Haoyu Li, John Mark Meldrim, Yongjun Jeff Hu |
2019-07-16 |
| 10355014 |
Assemblies having vertically-extending structures |
David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more |
2019-07-16 |
| 10344398 |
Source material for electronic device applications |
John Mark Meldrim, Yushi Hu, Yongjun Jeff Hu |
2019-07-09 |
| 10325653 |
Variable resistance memory stack with treated sidewalls |
Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz |
2019-06-18 |
| 10283524 |
Methods of filling horizontally-extending openings of integrated assemblies |
Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim |
2019-05-07 |
| 10224479 |
Phase change memory stack with treated sidewalls |
Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin |
2019-03-05 |
| 10193064 |
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same |
Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu |
2019-01-29 |
| 10177198 |
Phase change memory stack with treated sidewalls |
Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Shu Qin |
2019-01-08 |
| 10170493 |
Assemblies having vertically-stacked conductive structures |
Jordan D. Greenlee, John Mark Meldrim |
2019-01-01 |
