Issued Patents 2019
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522655 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | George R. Mulfinger, Ryan Sporer, Rick Carter, Hans-Jürgen Thees, Jan Höntschel | 2019-12-31 |
| 10475901 | Cap removal for gate electrode structures with reduced complexity | Hans-Juergen Thees | 2019-11-12 |
| 10418364 | Semiconductor device structure with self-aligned capacitor device | Hans-Jürgen Thees | 2019-09-17 |
| 10347543 | FDSOI semiconductor device with contact enhancement layer and method of manufacturing | Rick Carter, Vikrant Chauhan, George Jonathan Kluth, Anurag Mittal, David Pritchard +1 more | 2019-07-09 |
| 10224251 | Semiconductor devices and manufacturing techniques for reduced aspect ratio of neighboring gate electrode lines | Hans-Peter Moll, Gunter Grasshoff | 2019-03-05 |