| 10497862 |
Enhanced coercivity in MTJ devices by contact depth control |
Anthony J. Annunziata, Nathan P. Marchack |
2019-12-03 |
| 10388857 |
Spin torque MRAM fabrication using negative tone lithography and ion beam etching |
Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more |
2019-08-20 |
| 10256397 |
Structure and method to reduce shorting and process degradation in stt-MRAM devices |
Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan |
2019-04-09 |
| 10243138 |
Structure and method to reduce shorting and process degradation in STT-MRAM devices |
Anthony J. Annunziata, Janusz J. Nowak, Eugene J. O'Sullivan |
2019-03-26 |
| 10170608 |
Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
Szu-Lin Cheng, Michael A. Guillorn, Isaac Lauer |
2019-01-01 |
| 10170698 |
Spin torque MRAM fabrication using negative tone lithography and ion beam etching |
Anthony J. Annunziata, Armand A. Galan, Steve Holmes, Eric A. Joseph, Qinghuang Lin +1 more |
2019-01-01 |
| 10170609 |
Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET |
Szu-Lin Cheng, Michael A. Guillorn, Isaac Lauer |
2019-01-01 |
