Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497702 | Metal-oxide semiconductor (MOS) standard cells employing electrically coupled source regions and supply rails to relax source-drain tip-to-tip spacing between adjacent MOS standard cells | John Jianhong Zhu, Jeffrey Junhao Xu | 2019-12-03 |
| 10181403 | Layout effect mitigation in FinFET | Yanxiang Liu, Jun Yuan, Kern Rim | 2019-01-15 |