AL

Amitay Levi

SM Spin Memory: 15 patents #3 of 35Top 9%
ST Spin Transfer Technologies: 5 patents #1 of 20Top 5%
Overall (2019): #2,084 of 560,194Top 1%
20
Patents 2019

Issued Patents 2019

Patent #TitleCo-InventorsDate
10497415 Dual gate memory devices Kuk-Hwan Kim, Gian Sharma 2019-12-03
10468293 Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker 2019-11-05
10460778 Perpendicular magnetic tunnel junction memory cells having shared source contacts Kuk-Hwan Kim, Dafna Beery, Gian Sharma, Marcin Gajek, Kadriye Deniz Bozdag +4 more 2019-10-29
10438999 Annular vertical Si etched channel MOS devices Gian Sharma, Andrew J. Walker, Kuk-Hwan Kim, Dafna Beery 2019-10-08
10438996 Methods of fabricating magnetic tunnel junctions integrated with selectors Kuk-Hwan Kim, Dafna Beery, Andy Walker 2019-10-08
10431628 Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Marcin Gajek, Dafna Beery 2019-10-01
10355046 Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker 2019-07-16
10355047 Fabrication methods of forming annular vertical SI etched channel MOS devices Gian Sharma, Andrew J. Walker, Kuk-Hwan Kim, Dafna Beery 2019-07-16
10355045 Three dimensional perpendicular magnetic junction with thin-film transistor Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker 2019-07-16
10347822 Fabrication methods of forming cylindrical vertical SI etched channel 3D switching devices Gian Sharma, Andrew J. Walker, Kuk-Hwan Kim, Dafna Beery 2019-07-09
10347311 Cylindrical vertical SI etched channel 3D switching devices Gian Sharma, Andrew J. Walker, Kuk-Hwan Kim, Dafna Beery 2019-07-09
10333063 Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymers Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker 2019-06-25
10319424 Adjustable current selectors Kuk-Hwan Kim, Gian Sharma 2019-06-11
10243021 Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker 2019-03-26
10236075 Predicting tunnel barrier endurance using redundant memory structures Kuk-Hwan Kim, Peter Cuevas, Benjamin Louie 2019-03-19
10192787 Methods of fabricating contacts for cylindrical devices Gian Sharma, Kuk-Hwan Kim 2019-01-29
10192984 Dual threshold voltage devices with stacked gates Gian Sharma, Kuk-Hwan Kim 2019-01-29
10192789 Methods of fabricating dual threshold voltage devices Gian Sharma, Kuk-Hwan Kim 2019-01-29
10192788 Methods of fabricating dual threshold voltage devices with stacked gates Gian Sharma, Kuk-Hwan Kim 2019-01-29
10186551 Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Dafna Beery, Gian Sharma, Andrew J. Walker 2019-01-22