DB

Dafna Beery

SM Spin Memory: 13 patents #6 of 35Top 20%
ST Spin Transfer Technologies: 1 patents #12 of 20Top 60%
Overall (2019): #4,592 of 560,194Top 1%
14
Patents 2019

Issued Patents 2019

Patent #TitleCo-InventorsDate
10468293 Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels Kuk-Hwan Kim, Amitay Levi, Andrew J. Walker 2019-11-05
10460778 Perpendicular magnetic tunnel junction memory cells having shared source contacts Kuk-Hwan Kim, Gian Sharma, Marcin Gajek, Kadriye Deniz Bozdag, Girish Jagtiani +4 more 2019-10-29
10438995 Devices including magnetic tunnel junctions integrated with selectors Kuk-Hwan Kim, Andy Walker, Amity Levi 2019-10-08
10438999 Annular vertical Si etched channel MOS devices Gian Sharma, Amitay Levi, Andrew J. Walker, Kuk-Hwan Kim 2019-10-08
10438996 Methods of fabricating magnetic tunnel junctions integrated with selectors Kuk-Hwan Kim, Andy Walker, Amitay Levi 2019-10-08
10431628 Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Marcin Gajek, Amitay Levi 2019-10-01
10355047 Fabrication methods of forming annular vertical SI etched channel MOS devices Gian Sharma, Amitay Levi, Andrew J. Walker, Kuk-Hwan Kim 2019-07-16
10355045 Three dimensional perpendicular magnetic junction with thin-film transistor Kuk-Hwan Kim, Amitay Levi, Andrew J. Walker 2019-07-16
10355046 Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Amitay Levi, Andrew J. Walker 2019-07-16
10347822 Fabrication methods of forming cylindrical vertical SI etched channel 3D switching devices Gian Sharma, Amitay Levi, Andrew J. Walker, Kuk-Hwan Kim 2019-07-09
10347311 Cylindrical vertical SI etched channel 3D switching devices Gian Sharma, Amitay Levi, Andrew J. Walker, Kuk-Hwan Kim 2019-07-09
10333063 Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymers Kuk-Hwan Kim, Amitay Levi, Andrew J. Walker 2019-06-25
10243021 Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Amitay Levi, Andrew J. Walker 2019-03-26
10186551 Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ) Kuk-Hwan Kim, Gian Sharma, Amitay Levi, Andrew J. Walker 2019-01-22